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1 Polish Journal of Applied Chemistry

1 2005

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Germanium oxide thin films fabricated by plasma-assisted chemical vapor deposition

Gubiec K., Uzupis A., Tyczkowski J.

Polish Journal of Applied Chemistry

2005

Vol. 49, nr 1-2

33-39

Amorphous hydrogenated germanium oxide films (a-GeXOY:H) fabricated by plasma-assisted chemical vapor deposition (PACVD) from a mixture of oxygen and tetramethylgermane in radio-frequency (13.56 MHz) glow discharge, were investigated. Measurements of electrical conductivity and internal photoemission were carried out. It has been found that the films are amorphous insulators (a-I) with the transport gap of 6.7 eV and the conductivity of the order of 10–14 S/m. To characterize the chemical structure of the films, Raman spectroscopy was used. The main structure of the GeO4 type with low concentration of Ge–Ge and Ge–C bonds has been identified.