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Dynamics of laser-induced melting and modification of the surface of semiconductors by nanosecond laser pulses

Gnatyuk V., Aoki T., Vlasenko O., Gorodnychenko O.

Journal of Automation Mobile Robotics and Intelligent Systems

2009

Vol. 3, No. 4

33-36

In situ detection and dynamics of laser-induced melting in different semiconductor crystals (CdTe, CdHgTe, GaAs, InSb and SiC) were performed by the time-resolved reflectivity (TRR). The samples were subjected to irradiation with 20 ns pulses of KrF excimer or ruby laser with energy density varied in a wide range. The surface morphology of the crystals was monitored using optical microscopy and time dependences of the temperature of the crystal surface as a function of laser pulse energy density was also calculated. The melting and ablation threshold values were determined and specific features of the laser-induced phase transitions in the surface region of the semiconductors were analyzed.