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EN
Photoluminescence (PL) spectra and excitation spectra (PLE) (under steady-state conditions), time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range (under pulsed operation) at different temperatures (10 K-room) on anodically etched boron–doped silicon are presented. PLE shows that visible PL is excited by light from UV region. PL and PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DCs have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed a model in which the multibarrier structure is formed by larger Si crystallites or wires (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in a quantum well
EN
The Cu plasmas were produced by a ruby laser (~ 5 J, 694.3 nm, ~ 18 ns, ~140 GWcm^-2). Time-resolved spectra of the plasmas were observed in the region of 8-24 nm. The electron temperature was estimated to be about 40 eV. A small depth of the crater (~ 3 [my]m) and the surrounding ripples were observed at the Cu target surface. The trace of deposited plasma was explained as the Rayleigh-Taylor instability. Plasma was transparent to the laser beam.
EN
Experimental set-up for time dependent transient absorption/gain measure-ments with femtosecond time resolution is presented. The pump-probe spectroscopy tech-nique with femtosecond pulses from Ti: Sapphire laser system (Spectra Physics) allowed measurements of the optical density of transient absorption and transient gain in the spectral range of 330-700 nm, time resolution of 120 fs, and the accuracy of up to 0.005. The real time resolution and "zero time" dispersion of the system were found in two-photon absorption experiment.
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