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A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers

Pruszyńska-Karbownik Emilia, Gębski Marcin, Marciniak Magdalena, Lott James A., Czyszanowski Tomasz

Optica Applicata

2020

Vol. 50, nr 2

281--288

In this paper, we present experimental results of spontaneous emission clamping in the threshold for vertical-cavity surface-emitting lasers (VCSELs) with oxide current confinement. We show that the spontaneous emission not wholly clamps in the threshold. We propose a new method for determining the threshold current value using the study of the clamping phenomena. This method has an advantage over the commonly used methods in the accuracy because the current of the spontaneous emission clamping is betted defined than the current of the slope change of the stimulated emission light-current curve. The estimated uncertainty of the method is no more than 20 μA.

High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers

Kosiel K., Muszalski J., Szerling A., Bugajski M.

Optica Applicata

2007

Vol. 37, nr 4

423-432

A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well (QW) InGaAs layer. The AlGaAs layers of graded composition and graded refractive index (GRIN) formed the waveguide. Lasers were processed into wide stripe (W = 100 žm) mesas and were mounted on copper submounts and Peltier thermoelements in the standard TO-3 transistor housing. For stabilization of laser output, a silicon photodiode was placed next to a laser chip in the same case. Typical threshold current densities were 150 A/cm2, and the quantum efficiencies were of the order of 0.8 W/A. Lasers may work in pulsed regime as well as in CW regime with guaranteed optical power of 1 W at 300 K. The record threshold current densities achieved for 700 žm cavity were as low as 130 A/cm2 and the characteristic temperature was T0 = 200 K.