Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Opto-Electronics Review

1 2002

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: threading dislocation

Sortuj według:

Ogranicz wyniki do:

Heteroepitaxial technology for high-efficiency UV light-emitting diode

Kamiyama S., Iwaya M., Amano H., Akasaki I.

Opto-Electronics Review

2002

Vol. 10, No. 4

225-230

A high-quality AlGaN layer with a low density of threading dislocations is realised for the use of ultraviolet (UV) light-emitting diodes (LEDs). The new crystal growth method of using a GaN seed crystal with (1122) facets and lateral growth of Al₀.₂₂Ga₀.₇₈N through the low -temperature-deposited AlN interlayer enalbles the overgrown Al₀.₂₂Ga₀.₇₈N to have a low dislocation density of 2 x 10⁷ cm⁻² and be crack-free over the whole wafer. Applying the AlGaN as a base layer in UV-LEDs, high - performance devices with high output powers of more than 0.1 mW under 50 mA drive are demonstrated in a wide range of emission wavelengths from 323 to 363 nm. The highest output power of 1.2 mW at 50 mA driving current is obtained with 363 - nm emission wavelength.