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1

Thin-film-silicon solar cells

Carabe J., Gandia J.

Opto-Electronics Review

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2004

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Vol. 12, No. 1

1--6

EN

The traditional development of photovoltaics has been based on crystalline-silicon wafer technology. In the early 1970’s, however, a new approach arises based on the possibility to grow silicon in the form of a thin film onto a given substrate. Several techniques are used for such a deposition, among which plasma-enhanced chemical vapour deposition (PECVD) is clearly outstanding given its widespread use and success. More recently, very-high-frequency (VHP PECVD) and hot-wire CVD have appeared as very promising and fast developing alternatives with important potential and actual advantages. Thin-film technology introduces completely novel concepts and challenges in silicon photovoltaics. Low-temperature processes particularly adequate for large-area devices open up not only very important cost-reduction potential, but also new possibilities such as making semi-transparent or flexible modules. Additional important features are a highly automated production system, an enormous potential for building integration, a good performance at realistic working temperatures (around 40 C) and an excellent durability in outdoor conditions among others. Photovoltaics are facing important challenges for the near future. Silicon-wafer technology is evolving towards making thinner, cheaper, multicrystalline silicon. Thin-film-silicon researchers are in turn striving to make thicker, better, more crystalline films. Both ways seem to converge to new-generation photovoltaics in which wafer and thin-film technologies may be used in a synergistic rather than competing manner. Silicon heterojunction cells (made up of a crystalline silicon absorber onto which one or more thin-film silicon layers are deposited), such as the well-known HIT cell, are in the forefront of photovoltaics and may represent a breakthrough in the next few years.

2

Fabrication of thin film polycrystalline CIS photovoltaic heterostructure

Pisarkiewicz T., Jankowski H., Schabowska-Osiowska E., Maksymowicz L. J.

Opto-Electronics Review

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2003

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Vol. 11, No. 4

297--304

EN

Manufacturing processes and investigation of properties of thin film materials forming the CulnSe2 (CIS) solar cell have been described. The cell consisted of the following layers: glassl Mol p-CulnSe2/n-CdS/n⁺-ZnO/. CIS absorbers were obtained by pulse magnetron sputtering of metallic targets in argon yielding the multilayer precursors structures which were successively chalcogenised in selenium vapours. Cadmium sulfide buffer layer was manufactured by chemical bath deposition (CBD) method which offers the films with optimal properties. Window zinc oxide layers were obtained by RF magnetron sputtering of metallic Zn:Al target in oxygen reactive atmosphere. Thin film CIS solar cells with the efficiencies of the order of 6% have been produced. Further improvement in technology leading to CIS cells with better parameters have been discussed.

3

Microelectrode arrays based (bio)analytical systems

Michel Ph., Fiaccabrino P., van der Wal P., de Rooij N.F., Kaudelka-Hep M., Tercier-Waeber M.L., Buffle J.

Biocybernetics and Biomedical Engineering

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2001

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Vol. 21, no. 4

5-9

EN

Two types of systems: microelectrode array based analytical system for voltammetric monitoring of trace metals in natural waters and interdigitated electrodes system for electrochemiluminescence based analysis of codeine in pharmaceutical samples and for detection of ruthenium (II) complex label is described in the paper. The thin-film technology was used for microfabrication of an array of 100 interconnected Ir microdisc electrodes on Si/ShN4 substrate. The electrochemiluminescence system combines electrodes, a flowthrough cell and a photodetector on the same silicon chip.

PL

W artykule opisano dwa rodzaje systemów: system analityczny zawierający matrycę mikroelektrod do woltamperometrycznego monitorowania śladowych metali w wodach naturalnych oraz układ zawierający międzypalczaste elektrody do elektrochemiluminescencyjnej analizy zawartości kodeiny w próbkach farmaceutycznych i detekcji znaczników zawierających kompleksy rutenu (II). Zastosowano technologię cienkowarstwową do nanoszenia na podłoże Si/Si3N4, matrycy, zawierającej 100 mikrodyskowych elektrod. Układ elektrochemiluminescencyjny składał się z elektrod, celki przepływowej i fotodetektorów, wykonanych na jednej płytce półprzewodnikowej.

4

Innovative thin film techniques for microfabricating electrochemical sensors

Schöning M.J., Schubert J., Kloock J.P., Zander W., Mourzina Y.G., Legin A., Vlasov Y.G., Lüth H.

Biocybernetics and Biomedical Engineering

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2001

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Vol. 21, no. 4

107-119

EN

The pulsed laser deposition (PLD) technique is proposed as an innovative semiconductor-compatible fabrication technique in order to realise different thin film materials for chemical sensor applications. As two examples, Ta(2)0(5) and Al(2)0(3) layers on top of capacitive Si/Si0(2) structures and chalcogenide glass layers on metallised Si substrates show a nearly-Nernstian pH sensitivity of about 55-58 mV per decade and a high sensitivity towards bi- and univalent heavy metal ions of about 25-29 mV and 56-60 mV per decade, respectively. The layer thickness of the sensor materials is in the nm range. Even multi-component systems consisting of up to five different elements can be stoichiometrically deposited. Besides the electrochemical sensor characterisation, Rutherford backscattering spectrometry, ion channeling experiments, X-ray diffractometry and transmission electron microscopy have been performed in order to study the physical layer structure of the pulsed laser-deposited thin film materials.

PL

Zaproponowano technikę impulsowego laserowego osadzania (PLD), jako nową, kompatybilną z technologią półprzewodnikową metodę wykonania cienkich warstw w czujnikach chemicznych. Przykładowo, warstwy Ta(2)O(5) i AbO(3) nałożone na wierzchu struktur pojemnościowych Si/SiO(2) i warstwy szklistych halogenków na metalizowanych podłożach Si wykazały czułość na pH bliską Nernstowskiej, około 55-58 mV na dekadę i dużą czułość na jony metali ciężkich, około 25-29 mV i 56-60 mV na dekadę, odpowiednio dla jonów dwu- i jednowartościowych. Grubość warstwy czułej chemicznie była rzędu nanometrów. Można również nakładać stechiometrycznie układy wieloskładnikowe, zawierające do pięciu pierwiastków. Oprócz charakteryzacji czujników elektrochemicznych, wykonano: pomiary spektrometryczne rozpraszania wstecznego Rutherforda, eksperymenty tunelowania jonów, dyfraktometrię rentgenowską i pomiary z użyciem elektronowego mikroskopu prześwietleniowego, w celu zbadania fizycznej struktury warstw wykonanych techniką impulsowego laserowego osadzania.