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Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor

Tarchalski M., Kordyasz A. J., Pytel K., Dorosz D.

Nukleonika

2012

Vol. 57, No. 3

363-367

The result of the electric resistivity distribution modification in silicon wafers, by means of selective neutron transmutation doping (SNTD) method in the MARIA nuclear research reactor at Świerk/Otwock (Poland) is presented. Silicon wafer doping system has been fully designed for the MARIA reactor, where irradiation took place. The silicon wafer resistivity distribution after SNTD has been measured by the capacity voltage (C-V) method. In this article we show first results of this correction technique. The result of the present investigation is that the planar resolution of the correction process is about 4 mm. It is the full width at half maximum (FWHM) of the resistivity distribution produced by thermal neutrons irradiation of Si wafer through a 3 mm hole in the Cd-mask.