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How to enhance a room-temperature operation of diode lasers and their arrays

Sarzała R. P., Sokół A. K., Kuc M., Nakwaski W.

Optica Applicata

2016

Vol. 46, nr 2

213--226

A key problem to be solved during designing productive diode lasers and their lasing arrays is their proper thermal management enabling efficient high-power operation. Strictly speaking, the above demand leads to optimization of their structures to enhance lasing performance for high operation currents. It is well-known that deterioration of laser performance is mostly induced by excessive temperature increases within their volumes. In diode-laser arrays, additionally thermal crosstalk between array emitters should be taken into account. In the present paper, physics of heat-flux generation within the laser-diode volume and its extraction from it is analysed and described with the aid of our self-consistent simulation procedure. Then their thermal optimization is discussed including a proper design of a heat-flux generation within the laser volume, enhancement of its transport towards a laser heat-sink and, additionally in laser arrays, reduction of a thermal crosstalk between individual array emitters. The analysis is carried out using modern nitride edge-emitting ridge-waveguide lasers and their one-dimensional arrays as well as arsenide semiconductor disk lasers as typical examples of modern diode-laser designs. Physical processes responsible for heat-flux generation within these devices and heat-flux extraction from their volumes are analysed and an impact of some construction details on these processes is explained.

Wpływ rozmieszczenia emiterów na ujednorodnienie temperatury w matrycy zbudowanej na bazie szerokoprzerwowych materiałów azotkowych

Kuc M., Brozi A., Sarzała R. P.

Elektronika : konstrukcje, technologie, zastosowania

2013

Vol. 54, nr 9

26-29

W pracy przedstawiono wyniki trójwymiarowego modelowania cieplnego matryc zbudowanych na bazie krawędziowego emitera azotkowego. Obliczenia objęły wpływ liczby i szerokości emiterów (3-30 μm), ich ustawienia w matrycach (z i bez diamentowej nakładki w układzie montażowym) na maksymalny przyrost temperatury w przyrządach oraz wielkość efektu wzajemnego nagrzewania się sąsiadujących emiterów.

This paper presents results of our three-dimensional thermal simulation of emitter arrays based on III-Nitride edge-emitting optoelectronic device. An impact of emitter number and width (33-30 μm), emitters location in arrays (with and without diamond heat spreaser) on a maximum temperature rise and thermal crosstalk have been taken into our calculations.