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3 International Journal of Microelectronics and Computer Science

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Analysis and simulation modeling of programmable circuits using digital potentiometers

Pandiev I. M

International Journal of Microelectronics and Computer Science

2014

Vol. 5, nr 4

127--135

In this paper an object of analysis and simulation modeling are the basic programmable circuits using CMOS digital potentiometers or Resistive Digital-to-Analog Converters (RDACs). Based on the analysis and principle of operation an improved SPICE-based behavioral model for RDAC potentiometers is created. The model accurately reﬂects resolution (wiper steps), nominal end-to-end resistance, wiper resistance, linear and nonlinear increment/decrement of the wiper, common-mode leakage current, operating bandwidth, analog crosstalk, temperature coefficients and noise effects. Model parameters are extracted for the dual RDAC potentiometer AD5235 from Analog Devices as an example. The workability of the proposed simulation model is verified by simulation modeling and experimental testing of sample electronic circuits.

Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A

Angelov G. V.

International Journal of Microelectronics and Computer Science

2012

Vol. 3, nr 3

111-118

A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.

Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A

Angelov G. V.

International Journal of Microelectronics and Computer Science

2011

Vol. 2, nr 3

105-112

A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.