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Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

Piotrowski T., Węgrzecki M., Stolarski M., Gościński K., Krajewski T.

Opto-Electronics Review

2015

Vol. 23, No. 4

265-270

One of the key parameters determining detection properties of silicon PIN detector structures (p⁺-ν-n⁺ or n⁺-ν-p⁺) is minority carrier diffusion length in p-n junction regions p-n (p⁺-ν or n⁺-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ₁ = 500 nm (silicon penetration depth of around 0.9 μm) and λ₂ = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.

Photodecay method in investigation of materials and photovoltaic structures

Pisarkiewicz T.

Opto-Electronics Review

2004

Vol. 12, No. 1

33--40

Measurements of recombination parameters of both photoconductive materials and structures (solar cells) have been described. For materials, the methods are based on both steady-state photoconductivity (or quasi steady-state photoconductivity) and photocurrent decay PCD experiments. Examples of PCD measurements taken from literature for c-Si wafers and our own experiments for amorphous a-Si:H and a-SiC:H samples have been discussed. Investigation of solar cells based on the most popular photovoltage decay technique is widely described. Measurement and interpretation details have been discussed. Theoretical description and experimental evidence is, however, focused on combined photovoltage and photocurrent decays technique, developed in the authors’ laboratory. This technique enables us determination of both minority carrier lifetime and surface recombination velocity of photocarriers. The measurement setup enabling determination of both open circuit voltage and short circuit current decay times has been described.