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Effect of deposition time on surface plasmon resonance and Maxwell-Garnett absorption in RF-magnetron sputtered carbon-nickel films

Dalouji V.

Materials Science Poland

2016

Vol. 34, No. 2

337--343

In this work, carbon-nickel films were grown during four deposition times (50 s, 90 s, 180 s and 600 s) at room temperature on glass substrates by radio frequency magnetron sputtering. The optical absorption spectra of the films were investigated with a special emphasis on the surface plasmon resonance (SPR) of Ni nanoparticles. The optical absorption peaks caused by the surface plasmon resonance of Ni nanoparticles were observed in the wavelength range of 300 nm to 330 nm. It has been shown that the surface plasmon resonance peaks exhibit a red shift and a blue shift depending on the deposition time. The red and blue shifts of the surface plasmon resonance in the absorption spectra of the films were observed with the increase and decrease of Ni nanoparticle size, respectively. The Ni nanoparticle size, dielectric function of carbon matrix εm and plasma frequency of free electrons ωp for the films deposited at deposition time of 180 s have maximum values of 80 nm, 0.401 and 7.25 × 1015 s–1, respectively. These observations are in a good agreement with the electrical resistivity measurements and Maxwell-Garnett (M-G) effective medium theory (EMT)

Surface plasmon resonance sensors - novel architecture and improvements

Kasztelanic R.

Optica Applicata

2011

Vol. 41, nr 1

145--155

The paper deals with an optical sensor based on the phenomenon of surface plasmon resonance. It proposes a new geometry of the measurement head, which allows for measurements with both the change in the incident light angle and the change in the wavelength. The proposed sensors can also be used in a parallel and a series configuration, which increases the functionality of the setup, allows for a greater precision of measurements, and eliminates such distracting factors as temperature change. The article presents the results of a computer analysis of the sensor, as well as the analysis of its capabilities.