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Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Braga Osvaldo M., Delfino Cristian A., Kawabata Rudy M. S., Pinto Luciana D., Vieira Gustavo S., Pires Mauricio P., Souza Patricia L., Marega Euclydes, Carlin John A., Krishna Sanjay

Opto-Electronics Review

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2023

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Vol. 31, Special Issue

art. no. e144562

EN

The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for un unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer.

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Synthesis and characterization of oleic acid stabilized CdTe quantum dots and their properties as luminescence quencher of a pyridine pendented rod-coil homopolymer

Kaur Manpreet, Sahu Duryodhan

Materials Science Poland

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2020

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Vol. 38, No. 4

577--583

EN

We report a facile one-step non aqueous synthesis of oleic acid stabilized cadmium telluride (CdTe) quantum dots (QDs) with an average diameter of 3 nm to 4 nm by hot injection method. The synthesized oleic acid capped QDs observed by TEM were nearly spherical. The optical properties of QDs were characterized by UV-Vis absorption spectra and photoluminescence (PL) spectra. The structures of QDs and their surface passivation were further verified using transmission electron microscope (TEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR). The quenching effect of the CdTe QD was explored by addition of CdTe nanocrystals into a solution of rod-coil homopolymer (poly[10-(6-(9,9-diethyl-7-(pyridin-4-yl)-9H-fluoren-2-yl)naphthalen-2-yloxy) decyl methacrylate]) (PFNA) having pendent pyridine. The gradual addition of quantum dots to the solution of PFNA quenched the PL spectra of PFNA. This may be used to explore the coordination ability of pyridine containing homopolymer with CdTe quantum dots.

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Study of Non-isothermal Nitridation of Aluminum Nanopowders Passivated by Non-oxide Layers

Gromov A., Förter-Barth U., Teipel U.

Central European Journal of Energetic Materials

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2006

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Vol. 3, nr 1-2

65-72

EN

Results of DTA-TG investigation and chemical analysis of electro-exploded aluminum nanopowders coated and/or passivated with the reactive reagents: nitrocellulose (NC), oleic (C17H33COOH) and stearic (C17H35COOH) acids, amorphous boron and air (for a comparison) are discussed. Surface protection of aluminum nanopowders by coatings of different origin results in significant advantages in the energetic properties of the powders. Aluminum nanopowders with a protecting surface show increased stability to oxidation during storage period.

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Badanie wpływu technologii na parametry wybranych elementów optoelektronicznych

Zborowska-Lindert I., Boratyński B., Paszkiewicz B., Ohly T.

Elektronika : konstrukcje, technologie, zastosowania

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2004

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Vol. 45, nr 10

41-43

PL

Przedstawiono wyniki badań związanych z konstrukcją i wytwarzaniem fotodetektorów MSM oraz mikrobaterii fotowoltaicznych ze związków Ga(Al,In)As. W prawidłowej konstrukcji obydwu grup przyrządów, niezwykle istotna jest minimalizacja prądu ciemnego i upływności elementów. Opisano efekty pasywacji powierzchni fotodetektorów poprzez zastosowanie warstw dielektrycznych Si3NOx i AIN. Badano także wpływ konpozycji materiału warstwy aktywnej mikrobaterii fotowoltaicznej na jej prąd zwarciowy i napięcie rozwarcia.

EN

Influence of process technology on electrical parameters of Ga(Al,In)As MSM photodetectors and photovoltaic micro-arrays was envestigated. The effects of the dark current suppression due to surface passivation in MSM photodetectors with AIN and Si3NOx layers are presented. The photovoltaic arrays were fabricated as a series connection of seven Ga((Al,In)As PIN diodes. The influence of device active layer composition on the open circuit voltage and the short circuit current values was investigated.

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Design and fabrication of GaSb/InGaAsSb/AlGaSb mid-infrared photodetectors

Piotrowski T. T., Piotrowska A., Kamińska E., Piskorski M., Papis E., Gołaszewska K., Kątcki J., Ratajczak J., Adamczewska J., Wawro A., Piotrowski J., Orman Z., Pawluczyk J., Nowak Z.

Opto-Electronics Review

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2001

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Vol. 9, No. 2

188-194

EN

The paper reports on the design and fabrication of LPE-grown GaSb/n-InxGa₁-xAsySb₁-y/p-AlxGa₁-xAsySb₁-y heterojuction photodetectors operating in the 2-2.4 mm wavelength region. Experiments on LPE growth of high-x-content quaternaries as well as optimisation of device processing has been carried out. LPE growth at T » 530°C enabled obtaining lattice matched heterostructures with 19% indium in the active layer In₀.₁₉Ga₀.₈₁As₀.₁₆Sb₀.₈₄/Al₀.₂₄Ga₀.₇₆As₀.₀₄Sb₀.₉₆ and photodetectors with lc = 2.25 um. By increasing the temperature of epitaxial growth to 590°C In₀.₂₃Ga₀.₇₇As₀.₁₈Sb₀.₈₂/Al₀.₃₀Ga₀.₇₀As₀.₀₃Sb₀.₉₇ heterostructures (with 23% indium content) suitable for photodetectors with lc = 2.35 um have been obtained. Mesa-type photodiodes were fabricated by RIE in CCl₄/H₂ plasma and passivated electrochemically in (NH₄)₂S. These devices are characterised by differential resistance area product up to 400 Wcm² and the detectivity in the range the range 3´1010-2´1011 cmHz¹/²/W, in dependence on the photodiode active area and cut-off wavelength.