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1

Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications

Birla Shilpi

International Journal of Electronics and Telecommunications

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2019

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Vol. 65, No. 4

603--609

EN

In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed.

2

The temperature dependence of subthreshold characteristics of Si and SiC power MOSFETs

Kraśniewski J., Janke W.

Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej

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2016

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Nr 9

51--58

EN

In the paper, subthreshold characteristics of Si and SiC MOSFET power transistors in a wide range of current and temperature are considered. Representative examples of measured iD-vGS dependencies for temperatures from 20°C up to over 140°C are presented and discussed. Substantial differences of the shapes obtained for Si and SiC devices are observed. The subthreshold slope and subthreshold swing coefficient are extracted from measured curves for two types of devices and compared.

PL

W niniejszym artykule porównano charakterystyki w obszarze podprogowym tranzystorów mocy MOSFET z krzemu i węglika krzemu w szerokim zakresie prądu i temperatury. Dla reprezentatywnej partii tranzystorów przedstawiono i omówiono pomiary zależności iD-vGS w szerokim zakresie temperatur od 20°C do ponad 140°C. Dodatkowo zaprezentowano różnice w wartości nachylenia oraz wahania współczynnika w obszarze podprogowym od temperatury otoczenia dla badanych tranzystorów z Si i SiC.

3

Evolution of microstructures on silicon induced by femtosecond laser with multiple pulses

Yuan D. Q., Zhou M., Lu D. Q., Xu J. T.

Optica Applicata

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2011

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Vol. 41, nr 3

727--734

EN

The effect of multiple pulses of Ti:sapphire femtosecond laser system on silicon wafer was investigated. Using the pulse energy exceed the threshold of silicon to investigate the evolvement of structures and found that exceed certain fluence no any periodic structure will appearance. For 1.91 J/cm2, the pattern of columnar structure was formed in the central region of irradiation area. In further experiment, using the subthreshold multiple pulse femtosecond laser irradiation of 0.91 J/cm2, the periodic ripple structures and nanohole array were presented in the whole irradiation area due to the incubation effection. Also, we obtained the threshold of nanohole array to be higher than that of the periodic ripple structures.