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Measurements of the responsivity of FET‐based detectors of sub‐THz radiation

Kopyt Paweł, Salski Bartłomiej, Pacewicz Adam, Zagrajek Przemysław, Marczewski Jacek

Opto-Electronics Review

2019

Vol. 27, No. 2

123--129

This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector’s effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g., MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of a pHEMT device fabricated using a commercial GaAs process has been measured in a WR-3 frequency band. Additionally, the results have been compared against data obtained using an alternative approach. The verification method consisted in integrating exactly the same device with a broad-band antenna and a carefully selected high-resistivity silicon lens and comparing its performance with that of a commercial calibrated detector based on Schottky diodes.

THz detectors based on Si-CMOS technology field effect transistors : advantages, limitations and perspectives for THz imaging and spectroscopy

Marczewski J., Coquillat D., Knap W., Kolacinski C., Kopyt P., Kucharski K., Lusakowski J., Obrebski D., Tomaszewski D., Yavorskiy D., Zagrajek P., Ryniec R., Palka N.

Opto-Electronics Review

2018

Vol. 26, No. 4

261--269

Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.

Detektory promieniowania sub-THz budowane z użyciem krzemowych tranzystorów typu MOSFET

Kopyt P.

Elektronika : konstrukcje, technologie, zastosowania

2015

Vol. 56, nr 7

37-41

W artykule przeanalizowano z punktu widzenia projektanta wpływ elementów pasożytniczych występujących w krzemowych tranzystorach polowych typu MOSFET na działanie detektorów promieniowania sub-THz zbudowanych z użyciem takich przyrządów. Zaproponowano obwodowy model przyrządu zewnętrznego, a wartości elementów modelu dobrano w oparciu o typowe dane dostępne w literaturze. Model kanału tranzystora został zbudowany jako odcinek linii długiej opisanej za pomocą macierzy [Z], co ułatwiło zintegrowanie go z elementami pasożytniczymi. Uzyskany w ten sposób opis tranzystora MOSFET zastosowano do zbadania odpowiedzi kanału na pobudzenie sygnałem o częstotliwości sub-THz dostarczanego przez zaciski G i S. Wyniki takiej analizy przeprowadzonej dla tranzystorów MOSFET zintegrowanych z przykładową anteną łatową porównano z danymi uzyskanymi eksperymentalnie dla struktur o różnych wymiarach kanału uzyskując zadawalającą zgodność. Wydaje się zatem, że pomimo nieskomplikowanej budowy zaproponowany model może ułatwić projektowanie nowych detektorów promieniowania sub-THz i pełniejsze zrozumienie ich działania.

In this paper an analysis of parasitic elements that are found in all typical metal-oxide-semiconductor field-effect transistors (MOSFETs) has been performed from a viewpoint of a designer of sub-THz radiation detectors. A simplified model of the extrinsic MOSFET device has been proposed. Typical values of its parameters have been assumed based on literature. The author has also built a model of the MOSFET’s channel (intrinsic device) employing the standard transmission line approach and defining a Z-matrix of the circuit in order to facilitate its integration with the parasitic elements. The full effective circuit model of the MOSFET has been employed to analyze the behavior of the detector when subjected to sub-THz radiation delivered through the Gate and Source pads. Finally, predictions of the responsivity of an example detector built of a typical MOSFET integrated with a patch antenna have been compared with measurements of several structures employing MOSFETs of various channel widths. Good agreement between the predictions and the measurements has been demonstrated, which indicates that despite its simplicity the presented model can significantly help to better understand operation of MOSFET-based detectors and also to improve the design process.