Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: submicron MOSFETs

Sortuj według:

Ogranicz wyniki do:

Model for RTS noise in submicron MOSFETs

Šikula J., Sedláková V., Pavelka J., Navarová H., Chvátal M., Kopecký M.

Zeszyty Naukowe Wydziału ETI Politechniki Gdańskiej. Technologie Informacyjne

2010

T. 18

409-414

The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position.

W pracy przedstawiono model szumu RTS w submikronowych tranzystorach MOSFET, który może wyjaśnić niektóre ze złożonych zjawisk przełączania obserwowanych w przyrządch o nanoskali. Zaproponowano zmodyfikowane podejście dwu etapowe. Kwantowe przejścia nośników ładunku reprezentują pierwotny proces X(t) o dwóch lub trzech stanach kwantowych. Wielkością mierzalną jest modulacja prądu o stanach dyskretnych, reprezentujaca proces wtórny Y(t). Na podstawie zależności stałej czasowej pułapkowania c od prądu drenu można wyznaczyć współrzędną x położenia pułapki.

An Accurate DC MOSFET Model for VLSI Simulation

Ati A.A., Napieralski A., Napieralska M., Ciota Z.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2000

Vol. 48, nr 1

61-71

A new accurate, physical, continuous, and simple DC MOSFET model for short-channel devices down to submicron channel lengths is presented in this paper for the simulation of VLSI circuits. The proposed model is based on the Charge-Sheet Approximation (CSA) and describes efficiently the I-V characteristics from subthreshold to strong inversion region as well as from the linear to the saturation region of operation with a single current equation. The model takes into account the major physical effects in state-of-the-art of deep-submicron MOSFET devices such as short and narrow channel effects on threshold voltage, carrier velocity saturation, BIBL, CLM, and mobility reduction due to vertical field. The effect of parasitic source/drain series resistance to the drain current characteristics is explicitly included in the model. The model is physically based, so the continuity of drain current, output conductance, and transconductance is ensured over all [formula], and [formula] bias conditions. Therefore, the model is very suitable for VLSI simulation. The model accuracy is verified by comparison with experimental data for MOSFET with different channel lengths and widths.