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EN
The introduction of polyaniline into a semiconductor GaSe matrix leads to decrease in specific resistance of GaSe system almost in 10 times, as compared to the initial expensed GaSe matrix. Under the exposure of such structure to light, a deformation of the spectrum ρ(ω) with simultaneous increase in specific resistance and in inductive response of the system takes place; increase in dielectric permittivity is also observed at a dielectric losses angle value less than unity, this is of prospect from the point of view of the application of such system in the manufacturing technology for high-quality radio-frequency capacitors and time-delay lines. The co-intercallation of the given structure with iodine leads to decrease of ρ(ω) in two times and to increase of photoconductance in two times. In GaSe structure, thermogalvanic and abnormal photovoltaic effects are detected.
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