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1 Bulletin of the Polish Academy of Sciences. Technical Sciences

1 2015

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Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Piskorski Ł., Frasunkiewicz L., Sarzała R. P.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2015

Vol. 63, nr 3

597--603

In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.