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EN
Theoretical analysis of spin-polarized transport through a ferromagnetic single-electron transistor (FM SET) has been carried out in the sequential tunneling regime. Two external electrodes and the central part (island) of the device are assumed to be ferromagnetic, with the corresponding magnetizations being generally non-collinear. Transport properties of the FM SET are analyzed within the master equation approach, with the respective transition rates determined from the Fermi golden rule. It is assumed that spin relaxation processes on the island are sufficiently fast to neglect spin accumulation. It is shown that electric current and tunnel magnetoresistance (TMR) strongly depend on magnetic configuration of the device. Transport characteristics of symmetrical and asymmetrical structures have been calculated as a function of bias and the gate voltages.
2
Content available remote Torque due to spin-polarized current in ferromagnetic single-electron transistors
EN
Theoretical analysis of the current-induced torque acting on magnetic moment of the central part (island) of a ferromagnetic single-electron transistor has been carried out in the regime of sequential tunneling. The island is assumed to be ferromagnetic and attached to two leads (electrodes). One of the leads is ferromagnetic, and the corresponding magnetic moment is oriented arbitrarily. The torque is calculated from the spin current absorbed by the magnetic moment of the island, and the calculations are carried out in the limit of fast spin relaxation on the island (no spin accumulation).
3
Content available remote Spin and orbital Kondo effect in electrostatically coupled quantum dots
EN
The spin polarization of conductance of the system of two capacitively coupled quantum dots is studied in the Kondo regime by the equation of motion method. For the case of orbital degeneracy in the one spin channel the system can operate as a spin filter.
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