PL
 |
EN
Preferencje help
Polish version English version Język
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 5

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
Wyszukiwano:
w słowach kluczowych:  snubber circuit
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
1
Content available remote Wpływ obwodów odciążających na łączeniowe straty energii w przekształtnikach wysokiej częstotliwości
Grzejszczak Piotr, Czaplicki Adam, Szymczak Marek, Barlik Roman
Przegląd Elektrotechniczny
|
2020
|
R. 96, nr 6
93--97
PL
Niniejsza praca dotyczy analizy procesów łączeniowych w gałęzi z szybkimi tranzystorami MOSFET. Opisano podstawowe zjawiska towarzyszące szybkim procesom łączeniowym oraz zdefiniowano źródła drgań wartości chwilowych prądu i napięcia na łącznikach. Przybliżono znane z literatury sposoby ograniczania przepięć i tłumienia pasożytniczych drgań obwodu komutacyjnego. Podstawowym celem prowadzonych badań była analiza wpływu obwodów odciążających na łączeniowe straty energii, które są szczególnie istotne w przekształtnikach wysokiej częstotliwości.
EN
This work is devoted to influence of snubber circuits to the fast MOSFET switching. Basic phenomena associated with fast switching were described and sources of transistor current and voltage ringing were defined. The most popular methods of limiting overvoltage and suppressing of parasitic ringing of the MOSFET circuit were presented. The main purpose of the research was the impact of snubber circuits on MOSFET switching energy losses analysis, which are very important in high frequency converters.
2
Content available Analysis of circuit and operation for DC–DC converter based on silicon carbide
Niewiara Ł. J., Tarczewski T., Grzesiak L. M.
Computer Applications in Electrical Engineering
|
2016
|
Vol. 14
268--279
EN
In this paper operating analysis of DC–DC converter is presented. Silicon Carbide based DC–DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC–DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). Real power semiconductors are equipped in output and input capacitances. This feature may influence the generated input signal. Parasitic capacitances and inductances of the paths causes oscillations and voltage overshoots of the input PWM signal. To avoid such phenomenon, it is necessary to use a snubber circuit. This issue is also presented. The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.
3
Content available Computer aided design of snubber circuit for DC/DC converter with SiC power MOSFET devices
Niewiara Ł., Skiwski M., Tarczewski T., Grzesiak L. M.
Poznan University of Technology Academic Journals. Electrical Engineering
|
2015
|
No. 84
77--83
EN
In this paper a computer aided design of snubber circuit for DC\DC converter is presented. Due to the presence of parasitic LC circuit in the power stage (inductance and capacitance), it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Three types of snubber circuits (C, RC, RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation result. It confirm the proper choice of snubber circuit.
4
Content available Experimental study of snubber circuit design for SiC power MOSFET devices
Niewiara Ł. J., Skiwski M., Tarczewski T., Grzesiak L. M.
Computer Applications in Electrical Engineering
|
2015
|
Vol. 13
120--131
EN
In this paper a design process of snubber circuit for DC\DC converter is presented. Computer simulation and experimental tests were carried out. Due to the presence of parasitic LC (inductance and capacitance) circuit in the power stage, it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Six topologies of snubber circuits (C, single C, RC, single RC, RCD, single RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation results. It confirm the proper choice of snubber circuit.
5
Content available remote PSPICE simulation and design of a snubber circuit for power MOSFETs
Sunter S., Tatar Y.
Zeszyty Naukowe. Elektryka / Politechnika Łódzka
|
1998
|
z. 92
193--198
EN
In this paper, an R-C-D turn-off snubber circuit for power MOSFETs has been designed. Since the MOSFET operates at high switching frequencies and there is no way to avoid stray inductances in the circuit due to the connection cables, it is necessary to limit dv/dt of the MOSFET at turn-off. First, PSPICE model of the switching circuit has been obtained and then the effects of the connection cables on the MOSFET voltage has been demonstrated. An appropriate snubber circuit across the MOSFET has been used. The circuit which energies an inductive load from a dc supply has been designed by considering the results from the PSPICE model. Both simulation and experimental results are presented to confirm the correct operation of the snubber circuit.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.