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GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Piskorski Ł., Sarzała R. P.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2013

Vol. 61, nr 3

737--744

In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138 -Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?

Czyszanowski T., Nakwaski W.

Opto-Electronics Review

2007

Vol. 15, No. 2

88-97

Optical model, scalar orvectorial one, describing behaviour of an optical field within a diode-laser cavity, is one of the most important parts of modelling of a diode-laser operation. As compared to more accurate vectorial optical approaches, scalar ones are known to be less exact but simultaneously they need much less computation time. Besides, they have been sometimes found to be surprisingly exact even beyond their confirmed range of validity. Therefore, in this paper, real validity limits of their application have been determined by comparing their simplified results with more exact results obtained with the aid of vectorial models. The analysis comprises a comparison of an application of the most popular scalar approach to optical properties of diode lasers, i.e., the effective index method, and the vectorial method of lines for the standard 1.3µm GaAs-based stripe-geometry diode laser. The scalar model has been found to be quite exact in the case of a determination of the effective refractive index, i.e., the wavelength of emitted radiation, whereas its exactness in the lasing threshold analysis is much worse, especially in the case of higher-order modes. Our analysis is concluded with a determination of the regions where both models give satisfactorily close results.