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2 Lipiński M.

2 2010

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Krzemowe nanostruktury dla ogniw słonecznych

Lipiński M.

Elektronika : konstrukcje, technologie, zastosowania

2010

Vol. 51, nr 5

92-95

Przedmiotem pracy jest supersieć kwantowa utworzona z krzemowych kropek kwantowych w zastosowaniu dla ogniw słonecznych trzeciej generacji. Osadzono wielowarstwowe struktury azotku krzemu SiNx przy użyciu techniki PECVD. Krzemowe kropki kwantowe zostały wytrącone w warstwach SiNx z nadmiarem krzemu w wyniku wysokotemperaturowego procesu. Obrazy uzyskane przy użyciu wysokorozdzielczego elektronowego mikroskopu elektronowego (HRTEM) pokazują krystaliczną strukturę krzemowych kropek kwantowych.

The paper deals with silicon quantum dots superlatice for third-generation solar cells application. The multilayer structures of silicon nitride were deposited by PECVD method. The silicon quantum dots were precipitated from Si-rich layers SiNx due to high temperature annealing process. High resolution transmission electron microscope (HRTEM) images of cross sectional vies show the crystal structure of the silicon quantum dots.

Silicon nitride for photovoltaic application

Lipiński M.

Archives of Materials Science and Engineering

2010

Vol. 46, nr 2

69-87

Purpose: of this paper is to present the research results of silicon nitride SiNx films used for industrial silicon solar cells and for third generation solar cells. Design/methodology/approach: The SiNx films were deposited using RF- and LF-PECVD methods. The optical and structural properties were investigated by spectroscopic ellipsometry, XPS, FTIR spectroscopy and X-Ray reflectometry. The passivation properties were investigated by carriers lifetime measurements using a photoconductance decay (PCD) technique. For the photovoltaics of third generation the multilayer structures of SiNx were deposited and annealed in order to obtain the silicon quantum superlattices. These structure were characterized by high-resolution TEM, GI-XRD, photoluminescence, Raman and SPV spectroscopy. Findings: It is shown that the layers deposited by LF PECVD have more profitable optical and electrical properties for industrial silicon solar cells than those deposited by RF PECVD. The other finding is that multi-layer structure of SiNx annealed at high temperature shows the properties of the new semiconductor with the gap energy broader then the gap of the silicon. Research limitations/implications: The maximal density of SiNx layers is equal to 2.6 g/cm3. It is too low to obtain high efficiency mc-Si cells. The deposition process should be further optimized. The other limitation is obtaining a regular structure of quantum superlattice composed of quantum dots with defined diameter and density which is a very difficult technological task. This work should be continued in the future. Practical implications: The results of SiNx investigation can be used to increase the efficiency of mc-Si solar cells. The results of multilayer SiNx investigations may be applied to a solar cells based on silicon QDs superlatice. Originality/value: The work present useful methods for optimisation of passivation properties of SiNx films. The other value of the paper is obtaining new kind of nanomaterial composed of Si quantum dots embed in the dielectric matrix.