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Efficient design of silicon slot waveguide optical modulator

Malviya N., Priye V.

Opto-Electronics Review

2017

Vol. 25, No. 4

285--289

An optimal design of a slot waveguide is presented for realizing an ultrafast optical modulator based on a 220 nm silicon wafer technology. The recipe is to maximize the confinement and interaction between optical power supported by the waveguide and electric field applied through metallic electrodes. As height of waveguide is fixed at 220 nm, the waveguide and slot width are optimized to maximize the confinement factor of optical power. Moreover, metal electrodes tend to make the waveguide lossy, their optimal placement is calculated to reduce the optical loss and enhance the voltage per unit width in the slot. Performance of an optimally designed slot waveguide with metal electrodes as ultrafast modulator is also discussed.

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Tyszka-Zawadzka A., Szczepański P., Mossakowska-Wyszyńska A., Karpierz M., Bugaj M.

Opto-Electronics Review

2013

Vol. 21, No. 4

382-389

An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.