Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: semimagnetic semiconductor

Sortuj według:

Ogranicz wyniki do:

Conductivity of Cd1-xFexTe semiconductors at alternating current and temperatures lower than the room temperature

Zhukowski P., Kołtunowicz T., Węgierek P., Partyka J., Sidorenko J.

Przegląd Elektrotechniczny

2010

R. 86, nr 7

75-77

The paper presents results of conductivity measurements performed at alternating current for semiconducting compounds Cd1-xFexTe within the frequency range of and in the temperature area of below the room temperature. S-shaped frequency dependences have been observed within the concentration range of x < 0.03. Along with the temperature growth the segment of [sigma] increase gets shifted to the area of higher frequencies. A model that describes experimental dependences has been proposed and it takes into account the time of electron "settlement¨ after its hop from the impurity ground state as well as the probability of its return to the potential well wherefrom it has hopped.

W pracy przedstawiono rezultaty pomiarów przewodności przy prądzie przemiennym związków półprzewodnikowych Cd1-xFexTe (0.01 . . . 0.05) w zakresie częstotliwości (50 Hz .f . 1 .Hz) i w obszarze temperatur poniżej temperatury pokojowej. Zaobserwowano S – kształtne częstotliwościowe zależności w zakresie koncentracji . . 0.03. Wraz ze wzrostem temperatury odcinek wzrostu . przesuwa się w obszar wyższych częstotliwości. Zaproponowano model, opisujący eksperymentalne zależności, uwzględniający czas „osiadania” elektronu po przeskoku ze stanu podstawowego domieszki i prawdopodobieństwo jego powrotu do studni potencjału, z której on wykonał skok.

Ferromagnetic and structural properties of Ge1-xMnxTe epitaxial layers

Knoff W, Dziawa P, Osinniy V, Taliashvili B, Domuchowski W, Diduszko R, Domagała J, Łusakowska E, Jakieła R, Story T

Materials Science Poland

2008

Vol. 26, No. 4

295--300

Magnetic properties of thin layers of p-Ge1–xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1–xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10–100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.

Ferromagnetic transition in Ge1-xMnxTe semiconductor layers

Knoff W., Dziawa P., Osinniy V., Taliashvili B., Domuchowski V., Łusakowska E., Świątek K., Story T.

Materials Science Poland

2007

Vol. 25, No. 2

293--300

Magnetic properties of thin layers of p-Ge1-xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1-xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10-100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.