Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 Optica Applicata

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: semiconductor optical amplifiers

Sortuj według:

Ogranicz wyniki do:

Photonic generation of broadly tunable radio-frequency signal using a reflective semiconductor optical amplifier

Lu Youxi, Wang Fei, Gu Jun, Shi Lun, Peng Mengmeng, Huang Jingxin, Kang Wen

Optica Applicata

2019

Vol. 49, nr 1

27--36

A novel scheme for photonic generation of broadly tunable radio frequency signal using a reflective semiconductor optical amplifier (RSOA) is demonstrated. A continuous wave emitted from the laser diode is modulated by a Mach–Zehnder modulator, then the modulated optical carrier is injected into the RSOA. Due to the four-wave mixing effect in the RSOA, the limited frequency components of the modulated signal are expanded, which directly lead to the generation of a wide frequency comb. Two optical tunable bandpass filters are parallelly connected to select the desired sidebands, which are launched into a photodetector or photomixer to generate radio frequency signal by beating. Using the proposed method, the bandwidth of generated radio frequency signal can range from 20 to 300 GHz.

Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion

Qin C, Shen W, Zhao J., Yu H., Xu E

Optica Applicata

2015

Vol. 45, nr 2

163--172

In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.