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Correlation with annealing temperature of pure and doped ZnO thin film

Chabane F., Moummi N., Benramache S., Belahssen O., Bensahal D.

Journal of Power Technologies

2013

Vol. 93, nr 4

202--206

Transparent conducting pure and doped zinc oxide thin films with cobalt and indium were deposited on glass substrate by ultrasonic spray method. The thin films were deposited at 350 °C and annealed 500 °C. The direct correlation between the difference of the crystallite size (ΔG) and the difference of the Urbach energy (ΔEu) suggests that the crystallites sizes of the films are predominantly influenced by the disorder of the thin films. The crystallites size in the thin films depend by the disorder (less defects), where the minimum disorder confirmed the high crystallinity. The correlation of the conductivity before and after annealing temperature also indicates that the measurement in the electrical conductivity of the films by the optical band gap was equal; it is predominantly influenced by the transition tail width of undoped and doped ZnO thin films. It will be shown that the conductivity of undoped and doped ZnO is directly correlated with the band gap of the host material. The model proposed of pure and doped ZnO thin film with annealing temperature was investigated.

Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

Najim J. A., Rozaiq J. M.

International Letters of Chemistry, Physics and Astronomy

2013

Vol. 10, iss. 2

137-150

ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 μm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

Domieszkowanie dyfuzyjne krzemu ze szkliw o podwyższonej zawartości koncentracji domieszki

Wróbel E., Waczyński K., Filipowski W.

Elektronika : konstrukcje, technologie, zastosowania

2010

Vol. 51, nr 9

111-113

W artykule przedstawiono wyniki badań eksperymentalnych wpływu warunków nanoszenia rozwirowywanych roztworów krzemowych o wysokiej koncentracji domieszki na parametry elektryczne warstwy emiterowej ogniwa słonecznego.

This paper presents the results on study of the influence of experimental conditions for the deposition of spin-on glass silicon solutions of the hic dopant concentration on the electrical parameters of the solar cells emitte layers.