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Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (~9.4 µm) room temperature operating quantum-cascade lasers

Kosiel K., Kubacka-Traczyk J., Sankowska I., Szerling A., Gutowski P., Bugajski M.

Opto-Electronics Review

2012

Vol. 20, No. 3

239-246

In order to adjust the highly controllable and optimum growth conditions, the multi-step interrupted-growth MBE processes were performed to deposit a series of GaAs/Al₀.₄₅Ga₀.₅₅As QCL structures. The additional calibrations of MBE system were carried out during the designed growth interruptions. This solution was combined with a relatively low growth rate of active region layers, in order to suppress the negative effects of elemental flux instabilities. As a result, the fabricated QCL structures have yielded devices operating with peak optical power of ~12 mW at room temperature. That is a better result than was obtained for comparable structures deposited with a growth rate kept constant, and with the only initial calibrations performed just before the epitaxy of the overall structure.

New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Wośko M., Paszkiewicz B., Radziewicz D., Ściana B., Paszkiewicz R., Tłaczała M., Kovac J., Vincze A.

Optica Applicata

2009

Vol. 39, nr 4

739-747

In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure.

Epitaxial films of GaInPAsSb quinary solid solutions

Kuznetsov V. V., Rubtsov E. R., Kognovitskaya E. A.

Materials Science Poland

2006

Vol. 24, No. 4

1057--1066

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.