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Characterization of the native oxide on CdTe surfaces

Sobola Dinara, Kaspar Pavel, Nebojsa Alois, Hemzal Dušan, Grmela Lubomír, Smith Steve

Materials Science Poland

2019

Vol. 37, No. 2

206--211

This study focuses on the description of oxidation of CdTe monocrystal surfaces after selective chemical etching. Measurements of surface morphology of the oxides occurring in short time are valuable for deeper understanding of the material degradation and fabrication of reliable devices with enhanced performance. The samples with (1 1 1) orientation were selectively etched and cleaned of oxide. Exposure of the oxide-free surfaces of CdTe to air at normal atmospheric conditions over 24 hours leads to an appearance of characteristic surface features. The oxidized surfaces were investigated by scanning electron microscopy, scanning probe microscopy, Raman spectroscopy and ellipsometry. The results indicate clear differences in the oxidation of Cd-terminated and Te-terminated surfaces.

Determination of the Content of Promoters in Magnetite and Wustite Phases in the Fused Iron Catalyst

Lendzion-Bieluń Z., Jędrzejewski R.

Polish Journal of Chemical Technology

2013

Vol. 15, nr 1

27-29

Taking advantage of differences in etching rates of crystallographic phases, forming an oxidized form of the fused iron catalyst, a content of promoters in main phases, magnetite and wustite, was determined. A calcium oxide content in magnetite and wustite was 0.54 wt% and 3.59 wt%, respectively. Aluminum oxide was found in the magnetite phase, and its content was 4.5 wt%. The third promoter, potassium oxide, was almost completely located outside these phases. XRD and ICP-OES instrumental methods were used in the investigations.

Imaging properties of As₄₀S₄₀Se₂₀ layers

Stronski A. V., Vlcek M.

Opto-Electronics Review

2000

Vol. 8, No. 3

263-267

Here we investigate image formation properties of As₄₀S₄₀Se₂₀ layers with regard to their application for gratings fabrication. The light-sensitive properties (photo- and thermally-induced structural changes) of layers have been studied using optical techniques, including Raman spectroscopy. The dissolution kinetics of as - evaporated and exposed layers in amine based etching solutions has been studied. Characteristics of holographic gratings obtained on the base of As₄₀S₄₀Se₂₀ layers are presented.