Wyniki wyszukiwania - BazTech

1

SIMS depth profile analysis of WC-Co composite used in wood materials machining after nitrogen ion implantation

Wilkowski J., Barlak M., Konarski P., Böttger R., Werner Z.

Annals of Warsaw University of Life Sciences - SGGW. Forestry and Wood Technology

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2018

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No. 104

400--404

EN

The paper presents the analysis of depth profiles WC-Co samples obtained using the SIMS method. The surface of samples was modified in the process of nitrogen ions implantation. Secondary ion mass spectrometry (SIMS) is a very useful technique for the analysis of layered systems. It is based on the primary ion beam sputtering of solids and mass analysis of the emitted secondary ions. The results show a high correspondence between the nitrogen depth profiles obtained in the SUSPRE modeling and in the SIMS experiment.

2

Szkło jako obiekt zainteresowania chemików analityków. Cz. I - szkło i metody badania jego składu

Nowak A., Wagner B., Bulska E.

Analityka : nauka i praktyka

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2009

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nr 3

42-47

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Crystal quality and electrical properties of p-type GaN thin film on Si(111) substrate by metal-organic chemical vapour deposition MOCVD

Wu G. M., Hsieh T. H.

Journal of Achievements in Materials and Manufacturing Engineering

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2007

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Vol. 24, nr 1

193-197

EN

Purpose: In this paper, p-GaN samples have been grown on silicon substrates under various processing conditions. The effects of growth temperature and thermal annealing on the crystal quality and strain were carefully investigated. The electrical properties such as hole concentration and mobility would be discussed. Design/methodology/approach: GaN-based III—V semiconductors have become promising materials for short-wavelength optoelectronic devices because of their large and direct band gap energies. In this paper, p-GaN has been grown by metal-organic chemical vapor deposition (MOCVD) at 900 , 950, 1000, and 1050 degrees centigrade with low temperature LT-deposited AlN/AlGaN buffer layer. Findings: The mobility was achieved at 150 square cm/Vs and the hole concentration was 8x10 to the 17 - cubic cm. SIMS and XRD were used to measure and explain the relationships between hole concentration and the growth temperature. When the growth temperature was increased to 1000 degrees centigrade, the hole concentration was increased by ten times. According to the experimental results, the optimal growth temperature was 1000 degrees centigrade. After the thermal annealing process at temperature 850 degrees centigrade for 2 minutes, the FWHM of p-GaN was lowered to 617 arcsec. The effects of growth temperature were explained in the two temperature regions. From 900 to 1000 degrees centigrade, the incorporation rate of Mg was slightly increased and the strain decreased with the growth temperature. Mg would provide holes and the lower strain would result in better crystal quality. The crystal quality and Mg concentration effects on hole concentration below 1000 degrees centigrade was thus beneficiary. On the other hand, when the growth temperature was further increased, the strain and FWHM increased while hole concentration decreased at 1050 degrees centigrade. At this high temperature, Si might become donor in GaN. Research limitations/implications: It was suggested that the hole concentration reduced at 1050 degrees centigrade due to the Si diffusion and the strain caused by Mg dopant. According to the experimental data, the optimal growth temperature was 1000 degrees centigrade. After the annealing process, the FWHM of p-GaN was lowered to 611 arcsec. Originality/value: Determination of crystal quality and electrical properties of p-type GaN thin film on Si(111) substrate by metal-organic chemical vapor deposition MOCVD.

4

Secondary ion mass spectrometry: a powerful tool for diffusion studies in solids

De Souza R. A., Martin M.

Archives of Metallurgy and Materials

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2004

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Vol. 49, iss. 2

431-446

EN

We disuss the use of secondary ion mass spectrometry (SIMS) as a powerful tool for diffusion studies in solids. The basic principles of SIMS are introduced and examples for oxygen diffusion and cation diffusion in oxides are given. It is shown that SIMS is capable of analysing diffusion profiles on a broad length scale, from some tens of nanometres to several hundred micrometres, which makes it possible to measure diffusion coefficients from ab out 10(-22) m2s(-1) to 10(-10) m2s(-1).

PL

W pracy przedstawiono zalety SIMS jako narzędzia badania dyfuzji w ciałach stałych. Omówiono zasady metody SIMS oraz przykłady dyfuzji tlenu i kationów w tlenkach. Wykazano, ze metodą tą można analizować profile dyfuzji w szerokim zakresie odległości, od dziesiątek nanometrów do setek mikrometrów, co sprowadza sie do mozliwości pomiaru współczynnika dyfuzji w zakresie od 10 (do -18 potęgi) cm kwadr. s-1 do 10 (do-6potęgi)cm kwadr. s-1.

5

Metody badania powierzchni cd.

Sarbak Z.

LAB Laboratoria, Aparatura, Badania

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2003

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R. 8, nr 3

12-15

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Sample rotation applied in the SIMS depth profile analysis of layered structures

Konarski P.

Nukleonika

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1999

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Vol. 44, nr 2

143-148

EN

The Secondary Ion Mass Spectrometry (SIMS) depth profile analysis has been performed on a 20 nm thick sandwich structure, composed of 10 layers of B4C/Mo, each 2 nm thick, deposited on the silicon substrate. In order to reduce roughening effects, ion bombardment at the inclined angle and sample rotation have been applied. The comparison of the standard-stationary sample technique with the sample rotation technique is presented. The analyses were performed on the SAJW-02 analyser using 4 keV, 100 nA, Ar+and O2+ ion beam.

PL

Przedstawiono wyniki analizy profilowej układu warstwowego, otrzymane metodą spektrometrii mas jonów wtórnych SIMS (ang. Secondary lon Mass Spectrometry). Badano strukturę warstwową o grubości całkowitej 20 nm, składającą się z dziesięciu warstw B4C/Mo - każda o grubości 2 nm, naniesionych na podłoże krzemowe. W celu ograniczenia efektów zjawiska chropowacenia trawionej powierzchni, zastosowano bombardowanie jonowe pod kątem ostrym względem powierzchni oraz obrót trawionej próbki. Porównano wyniki uzyskane przy stosowaniu standardowej metody z nieruchomą próbką, z wynikami uzyskanymi przy stosowaniu techniki obracającej się próbki. Analizy wykonano na aparaturze SAJW-02 stosując wiązkę jonów Ar+ oraz O2+ o energii 4 keV i natężeniu prądu jonowego 100 nA.

7

Effect of nitrogen, carbon and oxygen ion imlantation on the structure and corrosion resistance of OT-4-0 titanium alloy

Krupa D., Baszkiewicz J., Jezierska E., Kozubowski J., Barcz A.

Nukleonika

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1999

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Vol. 44, nr 2

207-216

EN

This work presents the data on the properties of the surface layer of OT-4-0 titanium alloy after ion implantation. Polished samples were implanted with nitrogen doses of 1x1016, 1x1017, 6x1017 and 1x1018N+/cm2, carbon doses 5x1015, 1x1016, 1x1017 and 2x1017C+/cm2and oxygen doses 5x1016, 1x1017, 5x1017 and 1x1018O+/cm2. The corrosion resistance was examined by electrochemical methods in 0.9% NaCl at the temperature 37oC or in 3% NaCl at the temperature 20oC. The transmission electron microscopy was used to investigate the microstructure of implanted layers formed on OT-4-0. The chemical composition of the surface layers was examined by the secondary ion mass spectroscopy (SIMS). The increase of corrosion resistance has been observed as a result of structural modification of the surface layer.

PL

W pracy przedstawiono wyniki badań wpływu implantacji jonów azotu, węgla, tlenu na odporność korozyjną oraz strukturę warstwy powierzchniowej powstałej na stopie tytanu OT-4-0 w wyniku implantacji. W powierzchnię próbek implantowano jony azotu stosując dawki: 1x1016, 1x1017, 6x1017 i 1x1018N+/cm2, węgla stosując dawki 5x1015, 1x1016, 1x1017 i 2x1017C+/cm2 i tlenu stosując dawki 5x1016, 1x1017, 5x1017 i 1x1018O+/cm2. Badania odporności korozyjnej w nieodpowietrzonym roztworze 0,9% NaCI w temperaturze 37°C lub w 3% NaCI w temperaturze 20°C prowadzono metodami elektrochemicznymi. Badanie strukturalne wykonano za pomocą TEM. Skład chemiczny warstw powierzchniowych określono metodą SIMS. Stwierdzono wzrost odporności korozyjnej po implantacji. Zmiany odporności korozyjnej powiązano ze zmianą struktury warstwy powierzchniowej.