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Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Tyszka-Zawadzka A., Szczepański P., Mossakowska-Wyszyńska A., Karpierz M., Bugaj M.

Opto-Electronics Review

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2013

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Vol. 21, No. 4

382-389

EN

An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.

2

Optical channel structures based on sol-gel derived waveguide films

Karasiński P., Tyszkiewicz C., Rogoziński R.

Optica Applicata

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2011

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Vol. 41, nr 2

351--357

EN

Rib waveguides were fabricated with the use of selective, wet chemical etching of two-component waveguide films SiO2:TiO2 which were obtained using the sol-gel method. Photoresist was applied as a mask in the process. The etching of the layers SiO2:TiO2 was carried out in water solutions of ammonia fluoride. The paper presents the results of theoretical analysis as well as the power distributions in the obtained strip waveguides and directional couplers.

3

Żebrowe światłowody paskowe do zastosowań sensorowych

Karasiński P., Rogoziński R., Tyszkiewicz C.

Pomiary Automatyka Kontrola

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2010

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R. 56, nr 6

541-543

PL

Zmiany efektywnych współczynników załamania w czujnikach światłowodowych pracujących w oparciu o spektroskopię pola zanikającego mierzone są z zastosowaniem sprzęgaczy siatkowych lub interferometrów. Podstawowym elementem interferometrów planarnych są światłowody paskowe. Przedstawiana praca dotyczy żebrowych światłowodów paskowych. Otrzymywane metodą zol-żel warstwy falowodowe SiO2:TiO2 są selektywnie maskowane z zastosowaniem tradycyjnej fotolitografii a następnie trawione chemicznie. W ten sposób zostały wytwarzane jednomodowe żebrowe światłowody paskowe i sprzęgacze kierunkowe. W pracy przedstawione są wyniki analizy teoretycznej światłowodów żebrowych i wyniki badań eksperymentalnych wytworzonych struktur.

EN

Basic elements of planar interferometers are the channel waveguides. Presented work refers to the channel rib waveguides. In our previous work [7] we offered the production method of rib channel waveguides with the application of traditional photolithography and wet chemical etching of sol-gel derived silica-titania waveguide films. In this work we present new results of our research on rib waveguides and directional couplers. The theoretical analysis of rib waveguides was presented as well as the results of experimental investigations on the fabricated structures. The investigations on channel waveguides of the rib height of 5 nm was carried out for wavelengths: λ=677 nm. The waveguide films used in rib waveguides manufacturing technology are characterized by high refractive index (˜1.8) and ultra-low attenuation of 0.15 dB/cm. Rib waveguides of width w<4 Μm are monomode. For the rib waveguides we obtained the attenuation of (1.5š0.1) dB/cm. Rib waveguides of such an attenuation can be applied in the technology of integrated optics systems in sensor applications, and in particular for the construction of interferometers of Mach-Zehnder, Young or Michelson. The improvement of technology, and in particular the improvement in the quality of photolithographic masks should contribute to further decrease of attenuation of the produced rib waveguides.

4

Thermal models for silicon-on-insulator-based optical circuits

Biwojno K., Sujecki S., Vukovic A., Benson T.M., Sewell P.

Optica Applicata

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2004

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Vol. 34, nr 2

149-161

EN

Silicon has many advantages as a material for planar photonics but it does not possess a linear electro-optic effect. Whilst free carrier injection has been used to produce optical switches based on silicon on insulator (SOI) rib waveguides, the thermo-optic effect provides an attractive alternative way of modulating the refractive index in these structures. In this paper a fast analytical thermal solver is developed for SOI-based thermo-optic switches. It is shown that lateral heat leakage limits the temperature rise that can be achieved for a given thermal input power. The analytical model is then extended to allow investigation of the effect of thermal isolation trenches. These are found to improve performance by a factor of three. Finally, the effect of these trenches on the modes supported by the waveguide is briefly discussed.

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Analiza przełączania termicznego w układach optyki zintegrowanej wykonanych na podłożu krzemu

Biwojno K., Sujecki S., Sewell P., Benson T. M.

Elektronika : konstrukcje, technologie, zastosowania

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2002

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Vol. 43, nr 10

43-44

PL

Przeprowadzono analizę numeryczną przełącznika cyfrowego sterowanego termicznie, wykonanego w technologii SOI (silicon on insulator). Temperatura wewnątrz takiego urządzenia regulowana jest przez moc dostarczaną do grzejnika usytuowanego na szczycie żebra światłowodu. Do analizy zastosowano metodę różnic skończonych. Obliczono rozkład temperatury i pola elektromagnetycznego w światłowodzie oraz wyznaczono charakterystyki modowe dla modu podstawowego. Przeanalizowano wpływ temperatury na fazę sygnału świetlnego prowadzonego wzdłuż światłowodu.

EN

Optical switches are key components in flexible fibre systems. Thermo-optic switches can potentially provide low transmission loss, high stability, low power consumption and very large scale integration. In this paper finite difference based thermal and optical waveguide mode simulation are used to investigate the properties of thermo-optic (TO) switches based on silicon-on-insulator, rib waveguides.