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EN
A graphene/NPB structure with Re₂O₇ as an interfacial layer in the context of its potential use in the design of an organic light-emitting diode (OLED) is investigated. The X-ray photoelectron spectroscopy (XPS) study shows the formation of the Re₂O₇ phase on a monolayer graphene on quartz during thermal deposition in ultra-high vacuum (UHV). The ultraviolet photoelectron spectroscopy (UPS) study shows an enhancement of the work function of the graphene heterostructure after deposition of the Re₂O₇ layer up to 5.4 eV. The hole injection barrier between the Re₂O₇/graphene heterostructure and the N-bis-(1- naphthyl)-N,N-diphenyl-(1,1-biphenyl)-4,4-diamine (NPB) layer was estimated to be 0.35 eV, which is very promising for a good OLED performance.
EN
The presented research shows that commercially available graphene on quartz modified with rhenium oxide meets the requirements for its use as a conductive and transparent anode in optoelectronic devices. The cluster growth of rhenium oxide enables an increase in the work function of graphene by 1.3 eV up to 5.2 eV, which guarantees an appropriate adjustment to the energy levels of organic semiconductors used in organic light-emitting diode devices.
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