We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.
W pracy omówiono zastosowanie formalizmu funkcji nierównowagowych funkcji Greena w odniesieniu do przyrządów nanoelektronicznych o strukturze warstwowej. Metodę zilustrowano przykładem obliczeniowym, w którym wyznaczono charakterystykę prądowo napięciową diody rezonansowej, oraz gęstości prądu i ładunku w strukturze diody.
EN
In the paper the formalism of nonequilibrium Green function referred to nanostuctural layered electronic devices has been described. The method was illustrated with numerical example in which resonant tuneling diode has been solved for current voltage characteristic and current and charge densities within the diode structure.
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