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1 2011

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Reverse engineering of AlxGa₁₋xAs/GaAs structures composition by reflectance spectroscopy

Wośko M., Paszkiewicz B., Tarnowski K., Ściana B., Radziewicz D., Salejda W., Paszkiewicz R., Tłaczała M.

Opto-Electronics Review

2011

Vol. 19, No. 4

418-424

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial AlxGa₁₋xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in AlxGa₁₋xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.