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1 1998

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Ion bombardment-induced reduction of the ultra-high residual stress in sputter-deposited nitride films designed for electronics.

Nowak R.

Inżynieria Materiałowa

1998

R. XIX, nr 4

1238-1243

The paper adresses the novel post-deposition method of relaxing ultra-high internal stresses prevailing in sputter-grown thin films. A significant reduction of stress has been confirmed by X-ray diffraction and independent substrate deflection measurements for HfN films treated with Si and Au ions of various energies and fluence. The particular sequence of experiments made it possible to deduce about the only possible scenario resulting in stress-relaxation. The observed phenomenon was attributed to the transport of the interstitial defects within the thermal spikes induced by bombarding HfN with ions and an increase in vacancy concentration. The employed Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction technique confirmed that the ion bombardment did not affect either the composition, dislocation structure or texture of nitride films. Stress-relaxation observed for HfN films with the modified shallow zone (implantation with N+ ions of lower energies) served as a proof that the stress reduction is caused by the process which occurs within the film's volume.