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Content available Phase space analysis of semiconductor laser dynamics
EN
The dynamics of semiconductor lasers are modelled in the time domain using a pair of differential equations known as rate equations. The analysis, based on temporal solutions of these equations, yields practical results utilised in various applications. Alternatively, an analysis employing the phase space method, a well-established analytical tool in applied mathematics, provides a more comprehensive perspective on semiconductor laser dynamics. The main purpose of this paper is to provide a detailed and intuitive introduction to phase space analysis in the context of semiconductor laser dynamics. The goal is to offer an easily comprehensible description of the mentioned method, placing emphasis on the graphical representation and physical interpretation of the results. The method effectiveness is shown through its application to selected practical problems. Furthermore, semiconductor laser dynamics can be treated as an illustrative example, showcasing the applicability of the method, which can be readily extended to other types of lasers or even more advanced dynamic systems.
2
Content available remote Relative intensity noise study in two mode quantum dot laser
EN
In this paper, for the first time, we present a semiclassical noise model for InAs/GaAs quantum dot (QD) laser considering two photon modes, i.e., ground and first excited states lasing. This model is based on the five level rate equations. By using this model, the effect of temperature variations on relative intensity noise (RIN) of QD laser is investigated. We find that the RIN significantly degrades when excited state (ES) lasing emerges at high temperature. Furthermore, we investigate the influence of the quantum dot numbers on the RIN properties.
3
Content available remote Optical external efficiency calculation for mid-infrared quantum cascade laser
EN
In this paper, we present a simple method for calculation of optical external efficiency of mid-infrared quantum cascade laser. The approach is based on the three-level rate equations describing the variation of the electron number in the excited states and the photon number present within the cavity. We have obtained a simple analytical formula for the optical external efficiency. The effects of cavity lengths and current injection are taken into account. It has been found that the optical external efficiency becomes more important at high current injection and at lower cavity lengths.
EN
Novel formulas for analyzing the gain characteristics of the phosphate glass erbium-ytterbium (Er3+-Yb3+) co-doped waveguide amplifier (EYCDWA) are derived from the rate equations and the light propagation equations under the uniform dopant and steady-state conditions. In the derivation of these formulas, we have neglected the amplified spontaneous emission (ASE) and have introduced the initial energy transfer efficiency. By using these formulas, the effects of the pump power, signal power, dopant concentration and waveguide length on the gain characteristics of the EYCDWA are analyzed, the comparison is performed between the EYCDWA and the singly erbium-doped waveguide amplifier (EDWA), and some useful results are obtained.
EN
The dielectric relaxation of some three site models systems is evaluated using group theory to solve the basic rate equations to predict the relaxation in some simple cases.
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