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EN
Heavy metal oxide and oxyfluoride lead silicate glasses doped with rare-earth ions were prepared. Next, they were heat treated in order to obtain transparent glass-ceramics. The rare-earths as optically active ions were limited to trivalent Eu3+ and Dy3+. Correlation between the local structure and the luminescence properties of Eu3+ and Dy3+ ions in the studied glass and glass-ceramic systems was examined using X-ray diffraction, FT-IR and optical measurements. Especially, the ratio of integrated emission intensity of the 5D0-7F2 transition to that of the 5D0-7F1 transition of Eu3+, defined as the luminescence intensity ratio R (Eu3+) as well as the ratio of integrated emission intensity of the 4F9/2-6H13/2 transition to that of the 4F9/2-6H15/2 transition of Dy3+, defined as the luminescence intensity ratio Y/B (Dy3+), have been analyzed in details. Their values are reduced due to part incorporation of rare-earth ions into cubic ?-PbF2 crystalline phase. The excitation and luminescence spectra of rare-earth ions in glass samples before and after heat treatment are presented and discussed in relation to potential application in optoelectronics.
2
Content available remote Investigation and modelling of rare-earth activated waveguide structures
EN
In this paper the overview of the recent study on the rare-earth activated waveguides performed in the Optoelectronic Department of IMiO is presented. We reported on the development of rare earth-doped fluorozirconate (ZBLAN) glass fibers that allow a construction of a new family of visible and ultraviolet fiber lasers pumped by upconversion. Especially the performance of holmium devices is presented. The properties of laser planar waveguides obtained by the LPE process and the growth conditions of rare earths doped YAG layers are presented. In this paper we present also the theoretical study of the nonlinear operation of planar waveguide laser, as an example the micro disk Nd:YAG structure is discussed. We derived an approximate formula which relates the small signal gain in the Nd:YAG active medium and the laser characteristics, obtained for whispering-gallery modes and radial modes, to the output power and real parameters of the laser structure
3
Content available remote Epitaxial RE³⁺:YAG planar wavequide lasers
EN
The intereset in increasing signal speed, lowering optical losses and reducing power requirements led to the integration and miniaturisation of the optoelectronics components. Planar optical devices play an increasingly important role as the components for fibreoptic communication and optical computing systems. Their purpose is to couple, switch, modulate, amplify or generate optical signal. Recent important development is successful operation of planar wavequide amplifiers and lasers that could be easily coupled to fibre components. Several wavequide fabrication techniques are employed depending on host material, including semiconductor materials, dielectric crystals and glasses. In this work the basic problems related to active wavequide fabrication and properties will be discussed. We also report the spectroscopic and laser properties of the Nd³⁺:YAG/YAG epitaxial thin films obtained in ITME laboratory in Warsaw.
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