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Phase relations in the Cu2Si(Ge,Sn)Te3-HgTe systems

Parasyuk O.V.

Polish Journal of Chemistry

1998

Vol. 72, nr 11

2440-2449

The Cu2Si(Ge,Sn)Te3-HgTe systems were investigated using differential thermal, X-ray phase and microstructural analysis. Existence of the quaternary Cu2HgSiTe4 and Cu2HgGeTe4 phases, which melt congruently at 898 and 805 K respectively, have been established in Cu2SiTe3-HgTe and Cu2GeTe3-HgTe systems. The Cu2HgSnTe4 phase is a part of solid solution on the basis of Cu2SnTe3 in Cu2SnTe3-HgTe section. The solid solution on the basis of Cu2SiTe3 contains 7 mol% HgTe and the one on the basis of Cu2GeTe3 contains 12 mol% HgTe. The solid solubility in HgTe at 670 K is 2.5 mol% Cu2SiTe3, 4 mol% Cu2GeTe3, and 5.5 mol% Cu2SnTe3.