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Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

Bataillon Clara, Perez Jean-Phillipe, Alchaar Rodolphe, Michez Alain, Gilard Olivier, Saint-Pé Olivier, Christol Philippe

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144552

In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff wavelength from 11 μm to 13 μm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙10¹¹ H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.

Influence of gamma and proton radiations on the absorption, photoluminescence and birefringence of lithium niobate single crystals doped with Cu, Fe and Cr ions

Kaczmarek S.

Nukleonika

2001

Vol. 46, nr 2

63-69

The results of investigations of the influence of gamma and proton radiations on absorption, luminescence and birefringence of either pure or Cu, Fe and Cr doped LiNbO3 single crystals were presented. A method of birefringence dispersion testing on the entire areas of plane-parallel plates of LiNbO3 crystals has been illustrated by the influence of both types of irradiation on pure and Fe, Cr and Cu-doped LiNbO3 wafers. It was found that Li NbO3 LN:Cu single crystal shows a different behavior compared with other investigated crystals. First of all it exhibits lower susceptibility to gammarays, the absence of 500 nm additional absorption, and a strong proton susceptibility observed in polarimeter measurements.