Performance of infrared photodetectors operating at high temperatures is limited by the noise due to statistical nature of thermal generation of charge carriers in semiconductors. Auger processes are responsible for thermal generation in narrow gap semiconductors. Various ways to reduce Auger processes are considered including optimised doping, non-equilibrium mode of operations and the use of band gap engineered materials. The suppression of Auger processes will lead to perfect detection of long wavelength detection without cooling. Some applications of Auger suppressed devices are discussed including heterodyne receivers, IR imagers and detectors for optical communications.
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