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Analysis and investigation of Schottky barrier MOSFET current injection with process and device simulation

Schwarz Mike, Calvet Laurie E., Snyder John P., Krauss Tillmann, Schwalke Udo, Kloes Alexander

International Journal of Microelectronics and Computer Science

2018

Vol. 9, nr 1

1--8

In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. An improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available. Key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.

Simulation framework and thorough analysis of the impact of barrier lowering on the current in SB-MOSFETs

Schwarz M., Calvet L. E., Snyde J. P., Krauss T., Schwalke U., Kloes A.

International Journal of Microelectronics and Computer Science

2017

Vol. 8, nr 2

72--79

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus accurately predict the on- and off-current regions are adressed. Detailed investigations of these components are presented along with an improved Schottky barrier lowering model for field emission. Finally, a comparison for the transfer characteristics is shown for simulation and experimental data.