Indium gallium zinc oxide (In–Ga–Zn–O) thin films, which are transparent conductive films for liquid crystals and electroluminescent displays, were fabricated via singlestep sputter deposition using one target containing different proportions of indium oxide, gallium oxide, and zinc oxide powders. Experimental results suggest that the In–Ga–Zn–O thin films can be prepared using the method of single-step radio frequency (RF) sputter deposition, applying a powder target containing indium oxide, gallium oxide, and zinc oxide. The In–Ga–Zn–O thin films were prepared on Si substrates, and the deposition rate depended on the target composition. In these plasma processes, electron density and temperature were essentially independent of target composition. The prepared films were very smooth with a root-mean-square roughness of less than 10 nm. The crystallinity of the ZnO peak was observed in all the films; whereas the In and Ga peaks were not observed in the films prepared. The X-ray photoelectron spectroscopy of the films also revealed that the elemental concentration ratio of In–Ga–Zn–O thin films could be prepared using one target, and that can be easily controlled by ratios in the In2O3/Ga2O3/ZnO composition in the powder target. The transmittances were > 75% at 800 nm for all the target mixtures, and increased with increasing In2O3 in the powder target.
W pracy przedyskutowano sposoby wytwarzania warstw wieloskładnikowych z zastosowaniem metody rozpylania magnetronowego przykładzie cienkich warstw Ti-Cu. Tytan oraz miedź wybrano ze względu na całkowicie różne mechaniczne i termiczne właściwości tych materiałów. Warstwy wytworzono z zastosowaniem targetów stopowych oraz proszkowych o odpowiednio dobranych proporcjach składników. Na podstawie badań składu materiałowego stwierdzono znacznie większą zawartość miedzi w wytworzonych warstwach w porównaniu z wyjściowym składem rozpylanych targetów.
EN
In this paper various methods of deposition of multicomponent films by magnetron sputtering method have been discussed on the example of Ti-Cu thin films. Titanium and copper were chosen due to different (mechanical and thermal) properties of these materials. Thin films were deposited using alloy and powder targets with selected component ratio. Based on measurements of material composition it was found, that the amount of copper in manufactured thin films is much greater as compared to initial composition of sputtered targets in both cases.
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