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Effect of Al2O3 decoration on the opto-electrical properties of a porous Si/Cr2O3 composite

Ghrib Mondher, Tlili B., Razeg M., Ouertani R., Gaidi M., Ezzaouia H.

Opto-Electronics Review

2020

Vol. 28, No. 3

155 --163

In this work, we present an extensive investigation of the effect of Al₂O₃ decoration on the morphological, structural and opto-electronic properties of a porous Si (Sip)/Cr₂O₃ composite. The Sip layers were prepared by the anodization method. Al₂O₃ and Cr₂O₃ thin films were deposited by physical vapour deposition. The morphological and micro-structural properties of Sip/Cr₂O₃/Al₂O₃ were studied using the scanning electron microscope, energy dispersive X-ray spectroscopy and X-ray diffraction techniques. It was found that Al₂O₃ decoration with different concentration strongly affects the Sip/Cr₂O₃ microstructure mainly at the level of porosity. Variable angle spectroscopic ellipsometry demonstrates a strong correlation between optical constants (n and k) of Sip/Cr₂O₃/Al₂O₃ and microstructure properties. Dielectric properties of Sip/Cr₂O₃/Al₂O₃ such as electrical conductivity and conduction mechanism were explored using impedance spectroscopy over the temperature interval ranging from 340 to 410°C. A semiconductor to the metallic transition has been observed at high frequency.

Influence of powerful laser radiation on formation of pores in Si by electrochemical etching

Medvid A., Onufrijevs P., Fedorenko L., Yusupov M., Dauksta E.

Journal of Automation Mobile Robotics and Intelligent Systems

2009

Vol. 3, No. 4

166-168

The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.

Luminescence of porous silicon and porous silicon encapsulated structures.

Monastyrskii L.S, Olenych I.B., Parandii P.P.

Optica Applicata

2000

Vol. 30, nr 4

641-646

Spectroscopic properties of encapsulated porous silicon (PS) have been studied in detail. In order to investigate different heterostructures of porous silicon a complex of analysis methods such as photoluminescence (PL) electroluminescence (EL), cathodoluminescence (CL) and thermostimulated depolarisation (TSD) were applied. The process of light emission shows a tendency to decrease. This decrease varies for different kinds of luminescence. The EL intensity dynamics depends on polarization effects in porous silicon.