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1

Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET

Ali K. B., Neve C. R., Gharsallah A., Raskin J. P.

Journal of Telecommunications and Information Technology

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2010

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nr 4

93-100

EN

Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF behavior of silicon-on-insulator (SOI) MOS transistors is discussed. The injection of a 10 V peak-to-peak single tone noise signal at a frequency of 3 MHz ( fnoise) generates two sideband tones of ?56 dBm separated by fnoise from the RF output signal of a partially depleted SOI MOSFET at 1 GHz and 4.1 dBm. The efficiency of the introduction of a trap-rich polysilicon layer located underneath the buried oxide (BOX) of the high resistivity (HR) SOI wafer in the reduction of the sideband noise tones is demonstrated. An equivalent circuit to model and analyze the generation of these sideband noise tones is proposed.

2

A simple semi-analytical model for the Kink effect for the intrinsic n-channel polysilico thin film transistors

Siddiqui M. J., Qureshi S., Alshariff S. M.

Electron Technology : Internet Journal

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2007

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Vol. 39, nr 1

1-4

EN

In order to improve the modeling of Polysilicon thin film transistors (Poly-Si-TFTs) a precise evaluation of the excess current due to impact ionization is needed. In this paper we have proposed a simple model for the excess current resulting from the impact ionization occurring at high drain biases. Model is based on the estimation of the electric field in the saturated part of the channel. The electric field in the saturated region is obtained by the solution of the two- dimensional Poisson's equation. The model is semi-analytical and uses only one fitting parameter which is desirable for circuit simulation. The simulation results with the developed impact ionization current model are in excellent agreement with the available experimental output characteristics of the intrinsic n-channel Poly-Si-TFTs.

3

Termiczne emitery podczerwieni wykonane metodami mikromechaniki krzemowej

Piotrowski J., Nowak Z., Dobrzański L.

Elektronika : konstrukcje, technologie, zastosowania

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1998

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Vol. 39, nr 7-8

5-10

PL

Przedstawiono problemy konstrukcji i technologii termicznych emiterów promieniowania podczerwonego wytwarzanych metodami mikromechaniki krzemowej. Elementem promieniującym jest warstwa silnie domieszkowanego polikrzemu, osadzona na membramie z azotku krzemu i rozpięta nad wnęką wytworzoną w podłożu z krystalicznego krzemu. Mikropromienniki takie umożliwiają uzyskanie luminancji integralnej ok. 10 mW/(mm2 *sr) i charakteryzują się stałą czasową wynoszącą 1-4 ms. Mogą więc być zastosowane w urządzeniach techniki podczerwieni wymagających źródła promieniowania modulowanego elektrycznie. Przedstawione zostały kierunki dalszych prac zmierzających do uproszczenia technologii, zwiększenia szybkości działania i polepszenia niezawodności.

EN

Problems of the design and technology of thermal emitters of infrared radiation are discussed. The devices are fabricated using silicon mi-cromachinning. The radiating material is heavily doped polysilicon layer deposited onto silicon nitride membrane suspended over cavity prepared in crystalline silicon substrate. The micromachinned emitters make possible to achieve integral luminance of about 10 mW/(mm2 *sr) and exhibit time constant of 1-4 ms. The devices can be used in systems which require electrically modulated sources of infrared radiation. Recent efforts are on simplification of technology of the devices, increased speed of response and improved reliability.