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1 Journal of Achievements in Materials and Manufacturing Engineering

1 2007

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Physical properties of polyazomethine thin films doped with iodine

Hajduk B., Weszka J., Jarząbek B., Jurusik J., Domański M.

Journal of Achievements in Materials and Manufacturing Engineering

2007

Vol. 24, nr 2

67-70

Purpose: The aim of this paper is to show influence of doping 1,4-phenylene-methylenenitrilo-1,4- phenylenenitrilomethylene (PPI) with iodine and to propose doping mechanism and its impact on electronic structure of doped PPI thin films. Design/methodology/approach: Influence of iodine doping on electronic structure of polyazomethine thin films was investigated. Optical absorption spectra, XRD spectra and AFM images of doped PPI thin films were recorded. Findings: Doping mechanism relys on removing one electron from PPI pi-system by 12 molecules and forming counterions 13-. Formation of positive polaron means that doping of polyazomethine PPI is p - type. Research limitations/implications: Influence of iodine doping on electrical properties (with increasing of temperature) of PPI thin layers will be checking with Kethley appliance. We plan these measurements to be done in the foreseeable future. Practical implications: Iodine doping of thin PPI films process could results in better electrical conductivity of PPI, so doped polyazomethine films could find some applications for photonic and optoelectronic devices. Originality/value: Conjugated PPI is rarely enough reported but it is very interesting material as it has nitrogen atom in the backbone and it is isoelectronic counterpart of polyparaphenylenevinylene (PPV). This paper show that doping influences on surface morphology, cristallinity and optical properties of polymer. Furthermore, doping mechanism and changes of polymer electronic structure have been proposed in this paper.