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A new design of scanning IR detectors

Dvoretsky Sergey A., Kovchavtsev Anatoly P., Lee Irlam I., Polovinkin Vladimir G., Sidorov Georgiy Yu., Yakushev Maxim V.

Opto-Electronics Review

2020

Vol. 28, No. 2

93--98

Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.