Impedance spectroscopy is sensitive and easy to use experimental technique which can provide significant information on material structure. It is particularly effective in investigation of semiconductor heterostructure consisting of phases characterized by different permeativity. In this case impedance spectroscopy enables estimation of the phase distribution, specific dimension and shape. In this paper a range of experimental results obtained for: amorphous silicon, microcrystalline silicon, porous silicon, hydrogenated carbon-germanium semiconductors is reviewed. A special attention has been devoted to analysis of experimental data by means of equivalent circuit method.
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