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320x256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Vasilyev V. V., Varavin V. S., Dvoretsky S. A., Marchishin I. V., Mikhailov N. N., Predein A. V., Remesnik V. G., Sabinina I. V., Sidorov Y. G., Susliakov O. A.

Opto-Electronics Review

2010

Vol. 18, No. 3

236-240

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320x256 IR FPA operating in 8-12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02x10⁻⁷ W/cm², 4.1x10⁸ V/W and 27 mK, respectively.

Uncooled IR photodetectors for smart munitions

Piotrowski J., Brzozowski P.

Problemy Techniki Uzbrojenia

2000

R. 29, z. 72

29--49

Recent developments in uncooled infrared photodetectors for smart munitions are reviewed. We discuss fundamental limits to performance and barriers in practical implementation of the devices. The performance of infrared detectors is fundamentally limited at a low level by the noise due to statistical nature of the thermal generation and recombination processes. There are also technological problems in to achieve this level in practice. An advanced photovoltaic detector operating at ambient temperature in the MWIR and LWIR range, which overcomes existing difficulties, is reported. The device is based on 3-dimentional HgCdTe heterostructures monolithically immersed to ≈50x50 μm microlenses, which are formed directly in. the substrate with photolithography, wet etching and ion milling. The heterostructures are supplied with passivation and metal layers, which also act as the backside reflector and optical barrier preventing unwanted optical generation due to backside thermal background. Calculation shows that the 2D arrays of the devices are capable to achieve thermal resolution of 0.05 K for 30/sec frame rate und F#=2, optics which promises wide scale applications in smart munitions.

Optymisation of signal detection systems operates with various photovoltaic and photoconductive detectors

Bielecki Z.

Elektronika : konstrukcje, technologie, zastosowania

2000

Vol. 41, nr 7

19-22

The paper presents description of a family of signal processing low-noise systems operating with infrared detectors. Research and design works were limited to the systems of signal processing employing photovoltaic and photoconductive detectors. An analysis of noise models of photodetector preamplifier systems was performed by means of the computer programme CLIENT99 of the Protel International PLD Ltd. firm. It is especially important for design of low-noise amplifiers used in measuring or detecting systems of very low signals. Thus, due to computer simulation we can avoid designing the input stages of neasuring or detecting systems that do not fulfil the assumed requirements.

W artykule opisano niskoszumne przedwzmacniacze do detektorów podczerwieni. Główną uwagę skupiono na układach przeznaczonych do detektorów fotowoltaicznych i fotoprzewodzących. Analiza modeli szumowych układów fotodetektor-przedwzmacniacz została przeprowadzona za pomocą programu CLIENT 99. Tego typu modelowanie jest szczególnie istotne, przy projektowaniu niskoszumnych przedwzmacniaczy przeznaczonych do wzmacniania sygnałów o bardzo małych wartościach.