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Planarne domieszkowanie krzemem naprężonych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE

Ściana B., Radziewicz D., Paszkiewicz B., Tłaczała M., Sitarek P., Kudrawiec R., Misiewicz J., Kováč J., Florovič M.

Elektronika : konstrukcje, technologie, zastosowania

2005

Vol. 46, nr 2-3

14-15

Przedstawiono wyniki badań, dotyczące procesów planarnego domieszkowania krzemem naprężonych, pojedynczych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE. Badano wpływ parametrów procesu domieszkowania oraz szerokości studni kwantowej na rozkład domieszki krzemowej. Wprowadzenie domieszki typu delta do studni kwantowej w znaczący sposób zwiększa jej przestrzenne ograniczenie. Ponadto powoduje silną modyfikację przejść optycznych i wzmocniony efekt Starka.

This work presents the studies of Si-δ-doped InxGa1-x As/GaAs strained quantum well obtained by MOVPE technology. The influence of the growth parameters and quantum well width on silicon dopant distribution was investigated. It was shown that introducing delta layer into quantum well gives better carrier confinement. In addition, the PR and PC spectra of Si-δ-doped InxGa1-x As/GaAs SQW confirmed significant modification of the optical transitions and enhanced QCSE.

Optical characterisation of strained-layer In/sub x/Ga/sub 1-x/As/GaAs MQW LED grown by MOVPE.

Sęk G., Ciorga M., Bryja L., Misiewicz J., Radziewicz D., Ściana B., Tłaczała M.

Optica Applicata

2000

Vol. 30, nr 1

183-188

We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In the PR spectra, except the fundamental transition observed also in the emission spectra, two extra features related to the active region of the device have been seen. The presence of these two excited state transitions allowed the band structure to be analysed and the correctness of the device performance to be checked. We repeated the measurements after the top p-doped GaAs cladding layer had been etched off and discussed the changes of the built-in electric field.

Photoreflectance study of coupling effects in double quantum wells

Sęk G., Ryczko K., Kubisa M., Misiewicz J., Koeth J., Forchel A.

Opto-Electronics Review

1999

Vol. 7, No. 2

117-119

A double quantum well (DQW) molecular beam epitaxy (MBE) grown GaAs/AlxGa1-xAs structure was studied. To investigate the coupling effects in such a system 1 monolayer (ML) thick AlAs barrier was inserted at the centre of the GaAs/AlxGa1-xAs single well. Due to the strong coupling between wells each confined state splits into two : symmetric and antisymmetric ones. At room temperature photoreflectance (PR) spectrum features related to transitions between all these states were observed. Theoretical considerations based on the envelope function approximation were performed to obtain the energies of expected optical transitions. An excellent agreement between experiment and theory was obtained.