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InP:Fe Nanodiode conductivity current persistent photoenhamcement decey

Zardas G. E., Anagnostakis E. A.

TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk

2013

Vol. 17, No 3-4

139--143

The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out.