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Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

Zedan Islam T., El-Menyawy E. M., Nawar H. H.

Opto-Electronics Review

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2019

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Vol. 27, No. 4

348--354

EN

In this paper, of primary interest is to synthesis 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid (INSA) and to evaluate the main parameters of Au/INSA/n-Si/Al diode in dark and under illumination. Different techniques are used for interpreting the proposed INSA chemical structure. The dark current-voltage measurements were achieved in the temperature range of 293−413K. It is noticed that INSA films modify the interfacial barrier height of classical Au/n-Si junction. At low applied voltages, the I–V relation shows exponential behavior. The values ideality factor, n, and the barrier height, φ, are improved by heating. The abnormal trend of n and φ is discussed, and a homogenous barrier height of 1.45 eV is evaluated. The series resistance is also calculated using Norde's function and it changes inversely with temperature. The space charge limited current ruled with exponential trap distribution dominates at relatively high potentials, trap concentration and carriers mobility are extracted. The reverse current of the diode has illumination intensity dependence with a good photosensitivity indicating that the device is promising for photodiode applications.

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Pierwsze polskie przyrządy półprzewodnikowe : z perspektywy 50 lat

Klamka J.

Elektronika : konstrukcje, technologie, zastosowania

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2006

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Vol. 47, nr 6

40-46

PL

Przedstawiono historię rozwoju pierwszych polskich przyrządów półprzewodnikowych opracowanych przez autora i jego zespół. Dotyczy to głównie diod prostowniczych, diod Zenera, fotodiod oraz różnych przyrządów mikrofalowych (waraktorów, diod lawinowych, diod PIN, diod Gunna, diod Schottky'ego, tranzystorów i podzespołów), wytwarzanych głównie w Pionie Mikrofal Instytutu Technologii Elektronowej.

EN

In the paper, a history of the first semiconductor devices that were designed in Poland by the author and his co-workers, is described. It includes rectifier diodes, Zener diodes, photodiodes and microwave devices (varactors, avalanche diodes, PIN diodes, Gunn diodes, Schottky diodes, transistors and subsystems) - all developed at the Institute of Electron Technology, mainly in the Microwave Division of that Institute.

3

AlxGa₁-xN based UV visible-blind photodetector device applications

Omnes F., Monroy E., Calle F., Munoz E., Beaumont B., Gibart P.

Opto-Electronics Review

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2000

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Vol. 8, No. 1

43-55

EN

AlxGa₁-xN material system whose bandgap lies in the 3.42-6.2 eV range is extremely interesting for visible and solar blind UV photodetector applications. This paper describes the device performances of AlxGa₁-xN (x = 0 - 35%) UV photoconductors and Schottky barrier photodetectors for visible-blind applications grown on c-oriented sapphire, with a detailed balance with the basic materials properties. Conventional low-temperature grown AlN or GaN were used for all applications. High quality Schottky barrier photodiodes made of epitaxial lateral overgrown (ELOG) GaN are also presented. All Schottky barrier devices show a fast time response (15 ns for Al₀.₀₂₂Ga₀.₇₈N(Si) photodiodes grown on AlN nucleation layers), a high UV-visible rejection factor (> 3 orders of magnitude for AlGaN(Si) photodiodes grown on GaN or AlN nucleation layers, and rising up to 4 orders of magnitude for the GaN ELOG material), and high absolute values of above bandgap reponsivities (up to 130 mA/W for GaN ELOG materials). New application of AlGaN UV Schottky barrier photodetectors to monitor the biological action of the solar UV radiations as well as the device performance of high quality GaN and AlGaN metal semiconductor metal with cutoff wavelengths as short as 310 nm, are described in detail.

4

Gate-controlled narrow band gap photodiodes passivated with RF sputtered dielectrics

Rutkowski J., Wenus J., Gawron W., Adamiec K.

Opto-Electronics Review

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1999

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Vol. 7, No. 2

97-101

EN

Gate-controlled diodes were made by using evaporated indium electrodes overlapping the edge of mesa diodes, isolated from the surface by a layer of ZnS or by native anodic oxide of InSb or HgCdTe. The resulting three-terminal device characteristics with gate voltage as a parameter have been investigated. Relative spectral responses and I-V characteristics were measured at 77 K. The R₀A product is used as an indicator of the dark current of photodiodes passivated with ZnS layer. A plot of R₀A values versus gate potential shows that the optimum R₀A values are obtained at small positive gate bias voltage. This dependence is consistent with surface recombination influencing the R₀A product. The results of a two-dimensional model for calculating gate-induce surface leakage currents due to band-to-band tunnelling are presented. The exact quantitative comparison cannot be made between our results and theory, since the active tunnelling area is not known.

5

The EBIC study of boundary effects in the Si PIN photodiodes for X-ray detector applications

Riesz F., Toth A.L., Ryć L., Słysz W., Węgrzecki M.

Nukleonika

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1999

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Vol. 44, nr 4

635-646

EN

The electron-beam-induced current (EBIC) method is employed to study the boundary effects of the commercial BPYP and BPYP 42 photodiodes, aiming at a better understanding of their response to α-particle and light-pulse excitation. Our results show that the EBIC method is suitable for the assessment of photodetectors for X-ray detector applications. The sensitivities of different detector areas are quantitatively assessed. A good agreement is found with pulse-height spectra measurements. The complementary nature of electron-beam and light-pulsed/a-particle excitation is pointed out.

PL

Metoda pomiaru prądów indukowanych wiązką elektronową (EBIC) została zastosowana do badania wpływu efektów brzegowych na działanie fotodiod BPYP 44 i BPYP 42 użytych do detekcji impulsów promieniowania X emitowanego z plazmy laserowej. Dodatkowym celem pracy było wyjaśnienie nietypowych efektów obserwowanych podczas detekcji impulsów światła i cząstek α. Stwierdzono, że wnioski dotyczące funkcjonowania fotodiod, otrzymywane za pomocą różnych metod stymulacji, wzajemnie się potwierdzają i uzupełniają. Na ich podstawie można ocenić wkład poszczególnych obszarów powierzchniowych struktur do odpowiedzi detektorów na impuls promieniowania X.

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Potential application of the AlGaAs/GaAs heterostructure photodiodes for laser-plasma diagnostics

Ryć L., Riesz F.

Nukleonika

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1999

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Vol. 44, nr 4

647-655

EN

The AlGaAs/GaAs heterostructure PIN photodiodes, grown by molecular beam epitaxy, are evaluated for the measurement of laser pulses and X-ray diagnostics of laser-induced plasmas. Excitation by the 820 nm laser pulses yields rise time of the detector less than 200 ps. The device is sensitive to 1.06 µm pulses from the Nd:YAG laser. Also α-particle spectra are measured and interpreted. The detector is able to operate at zero bias. Theoretical response to X-rays is calculated.

PL

W pracy oceniono możliwość zastosowania fotodiodowej, epitaksialnej struktury p-i-n AIGaAs/GaAs do pomiaru impulsów laserowych i impulsów promieniowania X z plazmy laserowej. Przeprowadzone zostały testy struktur próbnych za pomocą impulsów światła z diody laserowej (820 nm), z lasera Nd:YAG (1,06 µm) oraz z użyciem źródła cząstek α (241Am). Stwierdzono, że detektory mogą pracować z zerowym napięciem polaryzacji. Czas narastania impulsów wyjściowych wynosił mniej niż 200 ps. Dla pełnej oceny możliwości detekcyjnych wykonano obliczenia wydajności detektorów na promieniowanie X dla różnych wariantów struktury powierzchniowej.