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Photodecay method in investigation of materials and photovoltaic structures

Pisarkiewicz T.

Opto-Electronics Review

2004

Vol. 12, No. 1

33--40

Measurements of recombination parameters of both photoconductive materials and structures (solar cells) have been described. For materials, the methods are based on both steady-state photoconductivity (or quasi steady-state photoconductivity) and photocurrent decay PCD experiments. Examples of PCD measurements taken from literature for c-Si wafers and our own experiments for amorphous a-Si:H and a-SiC:H samples have been discussed. Investigation of solar cells based on the most popular photovoltage decay technique is widely described. Measurement and interpretation details have been discussed. Theoretical description and experimental evidence is, however, focused on combined photovoltage and photocurrent decays technique, developed in the authors’ laboratory. This technique enables us determination of both minority carrier lifetime and surface recombination velocity of photocarriers. The measurement setup enabling determination of both open circuit voltage and short circuit current decay times has been described.